2N7002V n-channel mosfet features ? dual n-channel mosfet ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed maximum ratings @ 25 o c unless otherwise specified symbol rating rating unit v dss drain-source voltage 60 v v dgr drain-gate voltage 60 v v gss gate-source voltage 20 v i d drain current 280 ma p d total power dissipation 150 mw r ja thermal resistance junction to ambient 833 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 electrical characteristics @ 25 o c unless otherwise specified symbol parameter min typ max units v (br)dss drain-source breakdown voltage* (v gs =0vdc, i d =10 adc) 60 70 --- vdc v th(gs) gate-threshold voltage* (v ds =v gs , i d =250 adc) 1.0 --- 2.5 vdc i gss gate-body leakage* (v ds =0vdc, v gs = 20vdc) --- --- 0.1 adc i dss zero gate voltage drain current* (v ds =60vdc, v gs =0vdc) (v ds =0vdc, v gs = 20vdc, t j =125 ) --- --- --- --- 1 500 adc i d(on) on-state drain current* (v ds =7.5vdc, v gs =10vdc) 0.5 1.0 --- adc r ds(on) drain-source on-resistance* (v gs =5vdc, i d =50madc) (v gs =10vdc, i d =500madc) --- --- --- --- 3.0 2.0 ? g fs forward tran conductance* (v ds =10vdc, i d =200madc) 80 --- --- ms c iss input capacitance --- --- 50 c oss output capacitance --- --- 25 c rss reverse transfer capacitance v ds =25vdc, v gs =0vdc f=1mhz --- --- 5 pf switching t d(on) turn-on time --- --- 20 t d(off) turn-off time v dd =30vdc, v gen =10vdc r l =150 ? ,i d =200ma, r g =25 ? --- --- 20 ns * pulse test, pulse width Q 300 s, duty cycle Q 20% dimensions inches mm dim min max min max note a .006 .011 0.15 0.30 b .043 .049 1.10 1.25 c .061 .067 1.55 1.70 d .020 0.50 g .035 .043 0.90 1.10 h .059 .067 1.50 1.70 k .022 .023 0.56 0.60 l .004 .011 0.10 0.30 m .004 .007 0.10 0.18 sot-563
omponents 20736 marilla street chatsworth !"# $
% !"# mcc www . mccsemi .com revision: 1 2005/01/25
marking: kas units 2N7002V mcc www . mccsemi .com revision: 1 2005/01/25
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